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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3690 DESCRIPTION *Low Collector Saturation Voltage : VCE(sat)= 0.5V(Max)@ IC= 3A *Collector-Emitter Sustaining Voltage: VCEO(SUS)= 60V (Min) *High Switching Speed APPLICATIONS *Designed for high speed and power switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous w w scs .i w 100 V 60 V 7 V 3 A 6 A 1.5 A 15 W .cn mi e ICM Collector Current-Peak IB B Base Current-Continuous Collector Power Dissipation @ TC=25 PC Collector Power Dissipation @ Ta=25 TJ Junction Temperature 2 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL VCEO(SUS) VCE(sat)-1 VCE(sat) -2 VBE(sat) -1 VBE(sat) -2 ICBO ICEX IEBO hFE-1 hFE-2 hFE-3 PARAMETER Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain DC Current Gain CONDITIONS IC= 2A; IB= 0.2A, L= 1mH B 2SC3690 MIN 60 TYP. MAX UNIT V IC= 2A; IB= 0.1A B 0.3 0.5 1.2 1.5 V V V V A A mA A IC= 3A; IB= 0.15A B IC= 2A; IB= 0.1A B IC= 3A; IB= 0.15A B VCB= 60V; IE= 0 VCE= 60V; VBE= -1.5V Ta=125 w w K 200-400 w. VEB= 5V; IC= 0 IC= 0.3A ; VCE= 2V IC= 0.6A ; VCE= 2V IC= 2A ; VCE= 2V sem isc .cn i 100 100 60 200 10 10 1.0 10 400 hFE-2 classifications M 100-200 L 150-300 isc Websitewww.iscsemi.cn 2 |
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